PART |
Description |
Maker |
1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 2000 V, SILICON, SIGNAL DIODE 6 A, 100 V, SILICON, RECTIFIER DIODE
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1N4004GPE/4G 1N4005GPE/100 1N4002GPE/100 1N4003GPE |
Diodes 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
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Vishay Beyschlag
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BYW27-400GP BYW27-100GP BYW27-600GP |
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
TOKO, Inc. Vishay Beyschlag
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BYM05-100 BYM05-600 BYM05-400 |
0.5 A, 100 V, SILICON, SIGNAL DIODE 0.5 A, 600 V, SILICON, SIGNAL DIODE 0.5 A, 400 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc. Vishay Beyschlag
|
BYM10-1000/26 BYM10-600/46 BYM10-100/26 GL41T-HE3 |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 1300 V, SILICON, SIGNAL DIODE, DO-213AB
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Vishay Beyschlag VISHAY SEMICONDUCTORS
|
U1BC44 |
0.9 A, 100 V, SILICON, SIGNAL DIODE
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TVR2BTPA2 |
0.5 A, 100 V, SILICON, SIGNAL DIODE
|
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LL4148 |
0.15 A, 100 V, SILICON, SIGNAL DIODE
|
LITE-ON SEMICONDUCTOR CORP
|
BAS19-T1 |
0.2 A, 100 V, SILICON, SIGNAL DIODE
|
SENSITRON SEMICONDUCTOR
|
1A2-AP 1A2-TP |
1 A, 100 V, SILICON, SIGNAL DIODE
|
MICRO COMMERCIAL COMPONENTS
|
BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 |
From old datasheet system PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 RES,SMC,681,0HM,1/4W/1%,1 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管(高电流增益低集电极发射极饱和电压
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
FLLD258TA |
0.25 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
DIODES INC
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